DocumentCode
2033983
Title
Determination of kinetic parameters of gaas by monte carlo simulation of semiconductor plasma
Author
Kilessa, G.V. ; Asanov, E.E. ; Zuev, S.A. ; Slipchenko, N.I.
Author_Institution
Taurida Nat. V.I. Vernadsky Univ., Simferopol, Ukraine
fYear
2013
fDate
8-14 Sept. 2013
Firstpage
131
Lastpage
132
Abstract
The paper presents the results of computational experiments to determine GaAs kinetic parameters. The calculated dependences of scattering rates on the energy of carriers in valleys of GaAs are presented. The optimal energy intervals are determined for implementation of ballistic transport. The time and field dependences of drift velocity of carriers are calculated.
Keywords
Monte Carlo methods; ballistic transport; gallium arsenide; Monte Carlo simulation; ballistic transport; drift velocity; scattering rates; semiconductor plasma; Educational institutions; Electron mobility; Electronic mail; Gallium arsenide; Kinetic theory; Scattering;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave and Telecommunication Technology (CriMiCo), 2013 23rd International Crimean Conference
Conference_Location
Sevastopol
Print_ISBN
978-966-335-395-1
Type
conf
Filename
6652755
Link To Document