DocumentCode
2034008
Title
The influence of the coefficient of nonparabolicity on the distribution of the scattering angles in GaAs
Author
Kilessa, G.V. ; Asanov, E.E. ; Zuev, S.A. ; Starostenko, V.V.
Author_Institution
Taurida Nat. V.I. Vernadsky Univ., Simferopol, Ukraine
fYear
2013
fDate
8-14 Sept. 2013
Firstpage
133
Lastpage
134
Abstract
The paper states that when determining the scattering angle for interaction of electrons with acoustic phonons by deformation potential the coefficient of nonparabolicity shall be taken into account only for charge carriers in Γ valley. Also the analysis of distribution of scattering angles of polar scattering on LO-phonons and scattering on ionized impurities has been conducted.
Keywords
III-V semiconductors; acoustic wave scattering; deformation; electron-phonon interactions; gallium arsenide; GaAs; LO-phonon; charge carrier; deformation potential; electron-phonon interaction; impurity ionization; nonparabolicity coefficient; polar scattering; scattering angle distribution; Acoustics; Electronic mail; Gallium arsenide; IP networks; Impurities; Phonons; Scattering;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave and Telecommunication Technology (CriMiCo), 2013 23rd International Crimean Conference
Conference_Location
Sevastopol
Print_ISBN
978-966-335-395-1
Type
conf
Filename
6652756
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