• DocumentCode
    2034039
  • Title

    Comparison of glass etching properties between HCl and HNO3 solution

  • Author

    Wei Tao ; Wenlong Lv ; Zhan Zhan ; Wenjia Zuo ; Xiaochun Qiu ; Linyun Wang ; Daoheng Sun

  • Author_Institution
    Dept. of Mech. & Electr. Eng., Xiamen Univ., Xiamen, China
  • fYear
    2012
  • fDate
    5-8 March 2012
  • Firstpage
    562
  • Lastpage
    566
  • Abstract
    A comparison of glass etching properties between HCl and HNO3 solution is presented in this paper, which allows us to predict the etched product´s shape under a variety of etching conditions, mask compensation and multiple processing steps. Four conclusions could be draw from the experiments. First, the best concentration ratio of the etching solution to protect the mask from damage and get a channel with depth of 40 μm is HF:HCl:NH4F=5.5mol/L:4mol/L:2.5mol/L. Second, as the temperature increases, the longitudinal etching rate increases. However, the temperature has little influence on the lateral erosion ratio when the temperature gets high. Third, HCl has a better surface morphology against HNO3 as an addition to solution. Last, the mask will introduce strain because of sputtering, which is harmful to the glass etching..
  • Keywords
    compensation; erosion; hydrogen compounds; sputter etching; surface morphology; HCI; HNO3; depth 40 mum; etching rate; glass etching properties; lateral erosion ratio; mask compensation; multiple processing steps; sputtering; surface morphology; Human computer interaction; Integrated circuits; Nanoelectromechanical systems; HCl; HNO3; glass etching; masking layer;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nano/Micro Engineered and Molecular Systems (NEMS), 2012 7th IEEE International Conference on
  • Conference_Location
    Kyoto
  • Print_ISBN
    978-1-4673-1122-9
  • Type

    conf

  • DOI
    10.1109/NEMS.2012.6196838
  • Filename
    6196838