Effects of S/D doping concentrations on strained SiGe vertical I-MOS characteristics

Author

Pogaku, Divya ; Saad, Ismail

Author_Institution

Sch. of Eng. & IT (SEIT), Univ. Malaysia Sabah (UMS), Kota Kinabalu, Malaysia

Volume

2

fYear

2011

fDate

8-10 April 2011

Firstpage

294

Lastpage

297

Abstract

This paper reports the effects of source and drain doping concentration on the device characteristics of strained SiGe vertical Impact Ionization MOSFET (I-MOS). Silvaco 2-D Atlas simulations were done to examine the device characteristics. It was found that the source-drain doping concentrations had a significant impact on the threshold voltage of the device. With increasing doping concentrations, the threshold voltage values decreased. This can be explained by the higher electric field and the impact generation rates, with increasing doping concentrations. A threshold voltage of 0.9V was obtained for a drain bias of 1.75V, with S/D doping concentration of 10. The effects of S/D doping on subthreshold slopes was also examined with the help of TCAD device simulations.

Keywords

Ge-Si alloys; MOSFET; impact ionisation; semiconductor materials; technology CAD (electronics); SiGe; Silvaco 2D Atlas simulations; TCAD device simulations; drain bias; impact generation rates; source-drain doping concentrations; strained vertical impact ionization MOSFET; threshold voltage; voltage 1.75 V; Doping; Electric fields; Impact ionization; Semiconductor process modeling; Silicon; Silicon germanium; Threshold voltage; SiGe; Strain; impact ionization; subthreshold slope; threshold voltage; vertical I-MOS;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronics Computer Technology (ICECT), 2011 3rd International Conference on

Conference_Location

Kanyakumari

Print_ISBN

978-1-4244-8678-6

Electronic_ISBN

978-1-4244-8679-3

Type

conf

DOI

10.1109/ICECTECH.2011.5941704

Filename

5941704