DocumentCode
2036752
Title
Photovoltaic characteristics of a-C:H films prepared by plasma CVD
Author
Aoki, Yuya ; Iwashige, K. ; Ohtake, N.
Author_Institution
Dept. of Mech. Sci. & Eng., Tokyo Inst. of Technol., Japan
fYear
2003
fDate
5-5 June 2003
Firstpage
407
Abstract
Summary form only given, as follows. In this study, we investigated photovoltaic characteristics of a-C-H films fabricated by two different deposition methods, one is RF plasma CVD (RF-PCVD) and the other is surface wave plasma CVD (SWPCVD).
Keywords
amorphous semiconductors; carbon; elemental semiconductors; hydrogen; photovoltaic effects; plasma CVD; semiconductor growth; C:H; RF plasma CVD; RF-PCVD; a-C:H films; photovoltaic characteristics; surface wave plasma CVD; Diamond-like carbon; Optical films; Optical surface waves; Photonic band gap; Photovoltaic cells; Photovoltaic systems; Plasma chemistry; Plasma properties; Plasma waves; Solar power generation;
fLanguage
English
Publisher
ieee
Conference_Titel
Plasma Science, 2003. ICOPS 2003. IEEE Conference Record - Abstracts. The 30th International Conference on
Conference_Location
Jeju, South Korea
ISSN
0730-9244
Print_ISBN
0-7803-7911-X
Type
conf
DOI
10.1109/PLASMA.2003.1229955
Filename
1229955
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