Effects of ECR plasma pretreatment for the nucleation density and the crystallographic orientation of RuO/sub 2/ deposited on the TiN substrate by MOCVD

Author

Taejong Eom ; Choi, Kyuosuk ; Shin, Kyungchul ; Lee, Chongmu

Author_Institution

Dept. of Material Sci. & Eng., Inha Univ., Incheon, South Korea

fYear

2003

fDate

5-5 June 2003

Firstpage

410

Abstract

Summary form only given, as follows. For the deposition of RuO/sub 2/ on TiN films by metal organic chemical vapor deposition (MOCVD), precleaning of the TiN film surface by plasma treatment is essential to enhance the nucleation density of RuO/sub 2/. In this study effects of ECR plasma treatment using hydrogen, oxygen, and argon on the nucleation density and the crystallographic orientation of RuO/sub 2/ deposited by MOCVD were investigated using scanning electron microscopy (SEM), resistivity measurements, Auger electron emission spectrometry (AES) and X-ray diffraction (XRD).

Keywords

Auger electron spectra; MOCVD; MOCVD coatings; X-ray diffraction; crystal orientation; nucleation; plasma materials processing; ruthenium compounds; scanning electron microscopy; surface resistance; surface treatment; AES; Auger electron emission spectrometry; ECR plasma pretreatment; MOCVD; RuO/sub 2/; SEM; TiN; X-ray diffraction; crystallographic orientation; metal organic chemical vapor deposition; nucleation density; resistivity; scanning electron microscopy; surface precleaning; Chemical vapor deposition; Crystallography; Electron emission; MOCVD; Organic chemicals; Plasma chemistry; Plasma density; Scanning electron microscopy; Surface treatment; Tin;

fLanguage

English

Publisher

ieee

Conference_Titel

Plasma Science, 2003. ICOPS 2003. IEEE Conference Record - Abstracts. The 30th International Conference on

Conference_Location

Jeju, South Korea

ISSN

0730-9244

Print_ISBN

0-7803-7911-X

Type

conf

DOI

10.1109/PLASMA.2003.1229961

Filename

1229961