DocumentCode
2039882
Title
Simulation analysis of transient behavior of RF class D power amplifier due to fluctuation in load impedance
Author
Murakami, Hiroki ; Yamashita, Yoshimichi ; Suetsugu, Tadashi
Author_Institution
Dept. of Electron. Eng. & Comput. Sci., Fukuoka Univ., Fukuoka, Japan
fYear
2010
fDate
21-24 Nov. 2010
Firstpage
1776
Lastpage
1779
Abstract
Class D amplifier is rarely reported to be broken when it is operating with a fluctuating load. This is because excessive voltage or current is imposed on the transistor of the class D amplifier. However, transient behavior of class D amplifier due to load variation was not analyzed yet. In this paper, transient behavior of a class D amplifier due to load variation is simulated with PSPICE.
Keywords
SPICE; power amplifiers; transient analysis; transistors; PSPICE simulation; RF class D power amplifier; load impedance fluctuation; load variation; simulation analysis; transient behavior; transistor; Class D amplifier; Load variation; Simulation; Transient behavior;
fLanguage
English
Publisher
ieee
Conference_Titel
TENCON 2010 - 2010 IEEE Region 10 Conference
Conference_Location
Fukuoka
ISSN
pending
Print_ISBN
978-1-4244-6889-8
Type
conf
DOI
10.1109/TENCON.2010.5686110
Filename
5686110
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