DocumentCode
2040016
Title
Power dissipation at MOSFET gate port of class D RF power amplifier
Author
Kudo, Takuya ; Umeki, Toru ; Kiri, Akito ; Suetsugu, Tadashi
Author_Institution
Dept. Electron. Eng. & Comput. Sci., Fukuoka Univ., Fukuoka, Japan
fYear
2010
fDate
21-24 Nov. 2010
Firstpage
1772
Lastpage
1775
Abstract
In this paper, gate port power dissipation of class D amplifier is obtained as a function of amplitude and offset of drive signal with Pspice simulation. It is found that the amplitude of gate signal should be higher than 4 V in order to keep 80% efficiency in power stage of class D amplifier.
Keywords
MOSFET; power amplifiers; radiofrequency amplifiers; MOSFET gate port; Pspice simulation; class D RF power amplifier; gate port power dissipation; gate signal amplitude;
fLanguage
English
Publisher
ieee
Conference_Titel
TENCON 2010 - 2010 IEEE Region 10 Conference
Conference_Location
Fukuoka
ISSN
pending
Print_ISBN
978-1-4244-6889-8
Type
conf
DOI
10.1109/TENCON.2010.5686117
Filename
5686117
Link To Document