DocumentCode
2040847
Title
Experiment Study on Planar-Gate Electron Source with CNT
Author
Lu, Wenhui ; Song, Hang ; Zhao, Haifeng ; Zhao, Hui ; Li, Zhiming ; Jiang, Hong ; Mao, Guoqing ; Jin, Yixin
Author_Institution
Key Lab. of Excited State Processes, Chinese Acad. of Sci., Changchun
fYear
2006
fDate
38899
Firstpage
97
Lastpage
98
Abstract
Planar-gate type carbon nanotubes field emission electron sources were fabricated with special electrophoretic method. The simulation and experiment results showed electron emission from the nanotubes could be controlled effectively by the gate voltage. The easy fabrication process and simple structure will lead to the electron sources used in many practical vacuum microelectron devices
Keywords
carbon nanotubes; electron sources; electrophoretic coating techniques; field emitter arrays; C; electron emission; electrophoretic method; field emitter array; gate voltage; planar-gate electron source; planar-gate type carbon nanotubes field emission electron sources; vacuum microelectron devices; Anodes; Carbon nanotubes; Cathodes; Electrodes; Electron emission; Electron sources; Fabrication; Field emitter arrays; Insulation; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Vacuum Nanoelectronics Conference, 2006 and the 2006 50th International Field Emission Symposium., IVNC/IFES 2006. Technical Digest. 19th International
Conference_Location
Guilin
Print_ISBN
1-4244-0401-0
Type
conf
DOI
10.1109/IVNC.2006.335375
Filename
4134477
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