• DocumentCode
    2040856
  • Title

    Study of a Cr doped TiO2 derived from sol-gel process for gas sensing

  • Author

    Booth, J.M. ; Nguyen, L. ; Rix, C.J. ; Mainwaring, D.E. ; Li, Y.X. ; Wlodarski, W. ; Moslih, S.H. ; Russo, S.P.

  • Author_Institution
    Departments of Appl. Chem., R. Melbourne Inst. of Technol., Vic., Australia
  • fYear
    2000
  • fDate
    2000
  • Firstpage
    69
  • Lastpage
    72
  • Abstract
    The sol-gel route to thin bimetallic oxide sensor films was studied in terms of the evolution of a viscoelastic Ti gel precursor containing occluded Cr. The influence of Cr:Ti atomic ratio and annealing temperature was related to the resultant microstructure, morphology and oxygen sensing response of the annealed thin films. It was shown that progressive increase in Cr content changed the Ti-O properties from a n-type to a p-type semiconductor film with a commensurate reversal in sensor response.
  • Keywords
    annealing; chromium; crystal microstructure; crystal morphology; gas sensors; semiconductor thin films; sol-gel processing; titanium compounds; Cr:Ti atomic ratio; Ti viscoelastic gel precursor evolution; TiO2:Cr; annealing temperature; gas sensing response; microstructure; morphology; n-type semiconductor; occluded Cr; p-type semiconductor; sol-gel process; thin films; Annealing; Chromium; Elasticity; Microstructure; Morphology; Semiconductor films; Semiconductor thin films; Temperature sensors; Thin film sensors; Viscosity;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Optoelectronic and Microelectronic Materials and Devices, 2000. COMMAD 2000. Proceedings Conference on
  • Print_ISBN
    0-7803-6698-0
  • Type

    conf

  • DOI
    10.1109/COMMAD.2000.1022893
  • Filename
    1022893
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2040856