DocumentCode

2041206

Title

Low pressure MOCVD growth of GaSb using trisdimethylaminoantimony (TDMASb)

Author

Sustini, E. ; Sugianto ; Sani, R.A. ; Latunuwe, A. ; Arifin, P. ; Barmawi, M.

Author_Institution

Institute of Technology Bandung

fYear

2000

fDate

6-8 Dec. 2000

Firstpage

121

Lastpage

124

Keywords

Crystallography; Fluid flow; Hydrogen; Inductors; MOCVD; Physics; Substrates; Surface morphology; Temperature distribution; X-ray diffraction;

fLanguage

English

Publisher

ieee

Conference_Titel

Optoelectronic and Microelectronic Materials and Devices, 2000. COMMAD 2000. Proceedings Conference on

Conference_Location

Bundoora, Victoria, Australia

Print_ISBN

0-7803-6698-0

Type

conf

DOI

10.1109/COMMAD.2000.1022906

Filename

1022906