DocumentCode
2041309
Title
Cathodoluminescence study of nitride transistor structures characterisation of native oxide
Author
Goldys, E.M. ; Paskova, T. ; Sheely, J. ; Schaff, W. ; Eastman, L.F.
Author_Institution
Div. of Inf. & Commun. Sci., Macquarie Univ., Sydney, NSW, Australia
fYear
2000
fDate
2000
Firstpage
133
Lastpage
136
Abstract
Cathodoluminescence studies of GaN transistor structures have revealed a deep UV band at about 5 eV. The band was characterised as a function of accelerating voltage, temperature and spatially resolved images were taken. A similar band was detected in both undoped n-type and p-type doped GaN. We tentatively identify the band to be due to emission from the native gallium oxide.
Keywords
III-V semiconductors; cathodoluminescence; gallium compounds; junction gate field effect transistors; wide band gap semiconductors; 5 eV; GaN; HFET transistors; accelerating voltage; cathodoluminescence; deep UV band; spatially resolved images; temperature resolved images; transistor structures; Acceleration; Artificial intelligence; Gallium nitride; HEMTs; MODFETs; Rough surfaces; Surface roughness; Surface treatment; Temperature; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Optoelectronic and Microelectronic Materials and Devices, 2000. COMMAD 2000. Proceedings Conference on
Print_ISBN
0-7803-6698-0
Type
conf
DOI
10.1109/COMMAD.2000.1022909
Filename
1022909
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