Field Emitter Array with a Memory Function for Ultra-High Luminance FED

Author

Nagao, M. ; Yasumuro, C. ; Taniguchi, M. ; Itoh, S. ; Kanemaru, S. ; Itoh, J.

Author_Institution

Nat. Inst. of Adv. Ind. Sci. & Technol., Ibaraki

fYear

2006

fDate

38899

Firstpage

159

Lastpage

160

Abstract

Based on the thin film transistor (TFT)-controlled field emitter array (FEA) technology, the authors successfully fabricated an FEA with a memory function for an ultra-high brightness field emitter display (FED). If an additional TFT for discharge is inserted parallel with the capacitor, the light emitting period can be completely controlled. The brightness of FED can be dynamically controlled by changing light emitting period and pulse height of data line

Keywords

brightness; capacitors; elemental semiconductors; field emitter arrays; semiconductor thin films; silicon; silicon compounds; thin film transistors; Si-SiO₂; brightness; capacitor; field emitter array; field emitter display; light emitting period; memory function; memory-FEA; pulse height; thin film transistor; ultrahigh luminance FED; Capacitance; Capacitors; Data mining; Displays; Electrodes; Field emitter arrays; Leakage current; Optical arrays; Thin film transistors; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Vacuum Nanoelectronics Conference, 2006 and the 2006 50th International Field Emission Symposium., IVNC/IFES 2006. Technical Digest. 19th International

Conference_Location

Guilin

Print_ISBN

1-4244-0401-0

Type

conf

DOI

10.1109/IVNC.2006.335407

Filename

4134509