Detectors with low-barrier Mott diodes for millimeter-wave imaging arrays

The paper presents experimental results of a study of millimeter-wave detectors (94 GHz) based on low-barrier gallium arsenide diodes manufactured using the technology of the near surface isotype delta-doping. By varying parameters of the deltalayer it is possible to obtain a wide range of values of the effective barrier height, which is important for millimeter-wave imaging arrays that require zero-bias detectors. Optimum performance of the detectors are obtained with diodes having the barrier height of ~0.3 eV as shown theoretically and confirmed experimentally. A study of dependence basic parameters of detectors on temperature, input power and radiation polarization was performed.