DocumentCode
2041659
Title
Theoretical and experimental studies on the improvement of the response of n-type III-V QWIPs to TE mode infrared radiation
Author
Cheah, C.W. ; Tan, L.S. ; Karunasiri, R.P.G.
Author_Institution
Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore
fYear
2000
fDate
2000
Firstpage
186
Lastpage
189
Abstract
From the theoretical calculations on bound-to-continuum transitions in III-V compound n-type square well QWIPs based on the eight band k.p model incorporated with the envelope function approximation, it was found that a small response to TE mode infrared field excitation is possible. The role of the interband transition momentum matrix element P=-ix|X> within different regions of the QWIP is investigated, using two different material systems, namely GaAs/AlGaAs and InGaAs/GaAs. An asymmetric step well QWIP based on the study has been designed to improve the response to TE polarized excitation. The experimental measurements on the responsivity of the asymmetric QWIP are also presented.
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; infrared detectors; k.p calculations; photodetectors; semiconductor device models; semiconductor quantum wells; GaAs-AlGaAs; GaAs/AlGaAs; InGaAs-GaAs; InGaAs/GaAs; TE mode infrared radiation response; asymmetric step well; bound-to-continuum transitions; eight band k.p model; envelope function approximation; interband transition momentum matrix element; n-type III-V square well QWIP; Boundary conditions; Equations; Function approximation; Gallium arsenide; III-V semiconductor materials; Indium gallium arsenide; Infrared detectors; Optical computing; Polarization; Tellurium;
fLanguage
English
Publisher
ieee
Conference_Titel
Optoelectronic and Microelectronic Materials and Devices, 2000. COMMAD 2000. Proceedings Conference on
Print_ISBN
0-7803-6698-0
Type
conf
DOI
10.1109/COMMAD.2000.1022922
Filename
1022922
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