DocumentCode
2042883
Title
Thin films of Zr1-xSnxTiO4 for application in microelectronics
Author
Gusmano, G. ; Bianco, A. ; Viticoli, M. ; Kaciulis, S. ; Mattogno, G. ; Pandolfi, L.
Author_Institution
Dept. of Chem. Sci. & Technol., Tor Vergata Univ., Rome, Italy
fYear
2000
fDate
2000
Firstpage
379
Lastpage
382
Abstract
Thin films of Zr1-xSnxTiO4 (ZTS) were prepared by the polymeric precursor route. The influence of process parameters and dopants (Nb, Sb and Ta) on the chemical composition of the films was investigated by means of the XPS technique. Surface segregation of SnIV and the presence of Sn0, TiII, and TiIII species in the films were revealed from XPS depth profiles.
Keywords
X-ray photoelectron spectra; antimony; ceramics; doping profiles; liquid phase deposited coatings; liquid phase deposition; microwave materials; niobium; surface composition; surface segregation; tantalum; tin compounds; zirconium compounds; XPS depth profiles; ZTS thin film; ZrSnTiO4:Nb; ZrSnTiO4:Sb; ZrSnTiO4:Ta; dopant effect; film chemical composition; microelectronics; polymeric precursor route synthesis; process parameters; surface segregation; Chemical elements; Electrostatics; Gold; Lenses; Microelectronics; Sputtering; Surface contamination; Tin; Transistors; Zirconium;
fLanguage
English
Publisher
ieee
Conference_Titel
Optoelectronic and Microelectronic Materials and Devices, 2000. COMMAD 2000. Proceedings Conference on
Print_ISBN
0-7803-6698-0
Type
conf
DOI
10.1109/COMMAD.2000.1022969
Filename
1022969
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