Measurement of Field Emission Property on the Individual Silicon Nanowire by Scanning Tunneling Microscopy

Author

Ming, W.W. ; Chen, Jian ; She, J.C. ; Zhou, J. ; Xie, W.G. ; Deng, S.Z. ; Xu, N.S.

Author_Institution

Sch. of Phys. & Eng., Sun Yat-sen Univ., Guangzhou

fYear

2006

fDate

38899

Firstpage

277

Lastpage

278

Abstract

Silicon nanowires (SiNWs) array are expected to be a promising cathode in field emission devices. We report field emission (FE) characteristic on individual SiNW apex by using scanning tunneling microscopy (STM) operated in field emission mode at room temperature in ultrahigh vacuum condition. The result revealed the SiNWS has good emission characteristic. In addition, we verified the FN theory was also applicable in micro-scale field emission process through numerical value simulation of the field emission process

Keywords

elemental semiconductors; field emission; nanowires; scanning tunnelling microscopy; semiconductor quantum wires; silicon; Si; cathode; field emission devices; field emission property; scanning tunneling microscopy; silicon nanowire; ultrahigh vacuum condition; Carbon nanotubes; Cathodes; Educational technology; Iron; Microscopy; Nanoscale devices; Nanostructured materials; Silicon; Temperature; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

Vacuum Nanoelectronics Conference, 2006 and the 2006 50th International Field Emission Symposium., IVNC/IFES 2006. Technical Digest. 19th International

Conference_Location

Guilin

Print_ISBN

1-4244-0401-0

Type

conf

DOI

10.1109/IVNC.2006.335466

Filename

4134568