A Schottky tunnel barrier contact for electrical spin injection from a magnetic metal into a semiconductor

Author

Hanbicki, A.T. ; Stroud, R.M. ; Magno, R. ; Kioseoglou, G. ; Li, C.H. ; Jonker, B.T. ; Itskos, G. ; Mallory, R. ; Yasar, M. ; Petrou, A.

Author_Institution

Naval Res. Lab., Washington, DC, USA

fYear

2003

fDate

March 30 2003-April 3 2003

Abstract

In this paper, we report here that spin injection from an Fe Schottky contact produces a spin polarization of 32% in an AlGaAs/GaAs quantum well, demonstrate via the Rowell criteria that tunneling is the dominate transport process, and examine the atomic structure of the spin injecting interface with TEM.

Keywords

III-V semiconductors; Schottky barriers; aluminium compounds; ferromagnetic materials; gallium arsenide; iron; magnetic tunnelling; semiconductor quantum wells; spin polarised transport; transmission electron microscopy; AlGaAs/GaAs quantum well; Fe Schottky tunnel barrier contact; Fe-AlGaAs-GaAs; Rowell criteria; TEM; atomic structure; electrical spin injection; magnetic metal; spin injecting interface; spin polarization; tunneling transport process; Contacts; Iron; Light emitting diodes; Magnetic semiconductors; Magnetoelectronics; Optical polarization; Schottky barriers; Spin polarized transport; Temperature; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

Magnetics Conference, 2003. INTERMAG 2003. IEEE International

Conference_Location

Boston, MA, USA

Print_ISBN

0-7803-7647-1

Type

conf

DOI

10.1109/INTMAG.2003.1230334

Filename

1230334