DocumentCode
2043501
Title
Electron drift velocity modulation in mis transistor structure with one-dimensional electron gas
Author
Borzdov, A.V. ; Pozdnyakov, D.V. ; Borzdov, V.M.
Author_Institution
Belarusian State Univ., Minsk, Belarus
fYear
2013
fDate
8-14 Sept. 2013
Firstpage
877
Lastpage
878
Abstract
The effect of the gate voltage on the electron drift velocity in GaAs quantum nanowire transistor structure is studied. Electron transport is simulated by the Monte Carlo method in the electric quantum limit. The possibility of effective drift velocity modulation in the structure by the applied gate bias is shown.
Keywords
III-V semiconductors; MIS devices; Monte Carlo methods; electron gas; gallium arsenide; nanowires; semiconductor quantum wires; GaAs; GaAs quantum nanowire transistor; MIS transistor structure; Monte Carlo method; electric quantum limit; electron drift velocity modulation; electron transport; gate voltage effect; one-dimensional electron gas; Aluminum oxide; Electron mobility; Gallium arsenide; Scattering; Transistors; Wires;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave and Telecommunication Technology (CriMiCo), 2013 23rd International Crimean Conference
Conference_Location
Sevastopol
Print_ISBN
978-966-335-395-1
Type
conf
Filename
6653105
Link To Document