Optical and electronic properties of GaNAs/GaAs structures

Author

Buyanova, I.A. ; Chen, W.M. ; Pozina, G. ; Hai, P.N. ; Thinh, N.Q. ; Goldys, E.M. ; Xin, H.P. ; Tu, C.W.

Author_Institution

Dept. of Phys. & Meas. Technol., Linkoping Univ., Sweden

fYear

2000

fDate

2000

Firstpage

483

Lastpage

490

Abstract

We review our recent results from studies of electronic properties of GaNAs/GaAs structures with low nitrogen content, by photoluminescence (PL), PL excitation, time-resolved PL spectroscopies as well as optically detected magnetic resonance (ODMR) and cyclotron resonance (ODCR) studies. The issues to be addressed include key material-related properties and fundamental electronic parameters of the GaNAs alloy, relevant to device applications, such as identification of the dominant recombination processes in the alloy, compositional dependence of the electron effective mass and band alignment in the GaNAs/GaAs heterostructures.

Keywords

III-V semiconductors; cyclotron resonance; effective mass; gallium arsenide; gallium compounds; microwave-optical double resonance; photoluminescence; semiconductor epitaxial layers; semiconductor heterojunctions; time resolved spectra; GaNAs-GaAs; ODCR; ODMR; band alignment; compositional dependence; effective mass; heterostructures; optically detected cyclotron resonance; optically detected magnetic resonance; photoluminescence; recombination processes; time-resolved spectra; Cyclotrons; Electron optics; Gallium arsenide; Magnetic properties; Magnetic resonance; Nitrogen; Optical detectors; Photoluminescence; Spectroscopy; Spontaneous emission;

fLanguage

English

Publisher

ieee

Conference_Titel

Optoelectronic and Microelectronic Materials and Devices, 2000. COMMAD 2000. Proceedings Conference on

Print_ISBN

0-7803-6698-0

Type

conf

DOI

10.1109/COMMAD.2000.1022995

Filename

1022995