DocumentCode
2046233
Title
Etching of spin valve capping layers for sensor stabilization applications
Author
Jayasekara, W.P. ; Zhang, S. ; Mauri, D. ; Nguyen, S. ; Shatz, T. ; Devasahayam, A.J. ; Wang, J.
Author_Institution
Storage Technol. Div., IBM, San Jose, CA, USA
fYear
2003
fDate
March 30 2003-April 3 2003
Abstract
In this paper, we discuss ion beam etching (IBE) and reactive ion etching (RIE) of the Tantalum sensor capping layer. Limitations of physical etching are presented. A RIE approach that exhibits excellent selectivity between Ta and NiFe or CoFe is presented. Finally, the fabrication of exchange tabs for GMR sensor stabilization using this method is shown.
Keywords
cobalt alloys; ferromagnetic materials; giant magnetoresistance; iridium alloys; iron alloys; magnetic sensors; magnetic thin films; manganese alloys; metallic thin films; nickel alloys; spin valves; sputter etching; tantalum; CoFe-NiFe-IrMn-Ta; GMR sensor; IBE; RIE; exchange tabs; ion beam etching; reactive ion etching; sensor stabilization applications; spin valve capping layers; tantalum sensor capping layer; Couplings; Etching; Fabrication; Identity-based encryption; Ion beams; Magnetic heads; Magnetic recording; Magnetic sensors; Milling machines; Spin valves;
fLanguage
English
Publisher
ieee
Conference_Titel
Magnetics Conference, 2003. INTERMAG 2003. IEEE International
Conference_Location
Boston, MA, USA
Print_ISBN
0-7803-7647-1
Type
conf
DOI
10.1109/INTMAG.2003.1230446
Filename
1230446
Link To Document