DocumentCode
2047011
Title
Degradation in magnetoresistive sensors by short pulse zapping
Author
Haeseok Cho ; Granstrom, E. ; Stokes, S. ; Clifton Chang ; Sining Mao ; Tabat, N.
Author_Institution
Seagate Technol., Minneapolis, MN, USA
fYear
2003
fDate
March 30 2003-April 3 2003
Abstract
In this paper, we discuss about the degradation in magnetoresistive properties by short pulse zapping has been investigated for both spin valve (SV) and tunnelling giant magnetoresistive (GMR) heads of about 80 Gb/spl bsol/in/sup 2/ areal density. Simulated ESD transients with pulse from 0.1 nsec to 10 nsec were applied to both spin valve and tunneling GMR devices, and GMR properties of the devices were measure.
Keywords
giant magnetoresistance; magnetic heads; magnetic sensors; magnetoresistive devices; sensitivity; spin valves; tunnelling magnetoresistance; 0.1 to 10 ns; ESD transients; GMR; SV; magnetic heads; magnetoresistive properties; magnetoresistive sensors degradations; short pulse zapping; spin valve; tunnelling giant magnetoresistance; Breakdown voltage; Electrostatic discharge; Giant magnetoresistance; Magnetic heads; Magnetic sensors; Pulse measurements; Spin valves; Thermal degradation; Thermal resistance; Tunneling magnetoresistance;
fLanguage
English
Publisher
ieee
Conference_Titel
Magnetics Conference, 2003. INTERMAG 2003. IEEE International
Conference_Location
Boston, MA, USA
Print_ISBN
0-7803-7647-1
Type
conf
DOI
10.1109/INTMAG.2003.1230479
Filename
1230479
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