A novel approach of modeling channel potential for Gate All Around nanowire transistor

Author

Gaffar, Md ; Alam, Md Mushfiqul ; Mamun, Sayed Ashraf ; Zaman, Mohammad Asif ; Bhuiya, Anwarul Kabir

Author_Institution

Dept. of Electr. & Electron. Eng., Bangladesh Univ. of Eng. & Technol., Dhaka, Bangladesh

fYear

2010

fDate

21-24 Nov. 2010

Firstpage

1933

Lastpage

1937

Abstract

A compact, physical surface potential model for undoped Gate All Around (GAA) MOSFETs has been derived based on a novel analytical solution of the 3-D Poisson equation with the mobile charge term included. The new model is verified by published numerical simulator, Silvaco Device simulator Atlas with close agreement. Applying the newly developed model, the channel potential versus gate voltage characteristics for the devices having equal body diameter but different thickness pass through a single common point (termed as “crossover point”). A comparative study of between analytical and numerical solutions has been presented.

Keywords

MOSFET; Poisson equation; nanowires; semiconductor device models; surface potential; 3D Poisson equation; Silvaco device simulator Atlas; channel potential modeling; crossover point; gate all around nanowire MOSFET; gate voltage; 3D Poisson equation; Atlas; Silvaco; gate all around; surface potential;

fLanguage

English

Publisher

ieee

Conference_Titel

TENCON 2010 - 2010 IEEE Region 10 Conference

Conference_Location

Fukuoka

ISSN

pending

Print_ISBN

978-1-4244-6889-8

Type

conf

DOI

10.1109/TENCON.2010.5686447

Filename

5686447