DocumentCode
2049124
Title
The switching characteristics of sub-micron memory elements with synthetic anti-ferromagnetic (SAF) free-layers
Author
Janesky, J. ; Rizzo, N.D. ; Engel, B.N. ; Slaughter, J.M. ; Tehrani, S.
Author_Institution
Motorola Labs., Tempe, AZ, USA
fYear
2003
fDate
March 30 2003-April 3 2003
Abstract
In this paper, we have studied the switching characteristics of patterned synthetic anti-ferromagnetic (SAF) element for application as a free layer in magnetic random access memory (MRAM).
Keywords
antiferromagnetic materials; cobalt alloys; exchange interactions (electron); iron alloys; magnetic anisotropy; magnetic switching; magnetic thin films; nickel alloys; random-access storage; synthetic metals; NiFe; NiFeCo; magnetic random access memory; submicron memory elements; switching; synthetic antiferromagnetic free-layers; Antiferromagnetic materials; Nanotechnology;
fLanguage
English
Publisher
ieee
Conference_Titel
Magnetics Conference, 2003. INTERMAG 2003. IEEE International
Conference_Location
Boston, MA, USA
Print_ISBN
0-7803-7647-1
Type
conf
DOI
10.1109/INTMAG.2003.1230566
Filename
1230566
Link To Document