• DocumentCode
    2050716
  • Title

    Relaxation of localized charge in trapping-based nonvolatile memory devices

  • Author

    Janai, Meir ; Shappir, Assaf ; Bloom, Ilan ; Eitan, Boaz

  • Author_Institution
    Saifun Semicond., Netanya
  • fYear
    2008
  • fDate
    April 27 2008-May 1 2008
  • Firstpage
    417
  • Lastpage
    423
  • Abstract
    Relaxation dynamics of trapped holes and trapped electrons in the ONO layer of NROM devices is studied. Hole relaxation is eight orders of magnitude faster than electron relaxation. The degradation of data retention in cycled NROM cells is interpreted in terms of dispersive transport arising from random-walk of excess holes in the disordered nitride glass.
  • Keywords
    electron traps; hole traps; read-only storage; NROM device; ONO layer; disordered nitride glass; dispersive transport; localized charge relaxation; trapping-based nonvolatile memory device; Charge carrier processes; Charge carriers; Dispersion; Electron traps; Equations; Glass; Hot carriers; Nonvolatile memory; Photonic band gap; Temperature; NROM; NVM; ONO; Si3N4; amorphous semiconductors; data retention; flash memory; glass;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium, 2008. IRPS 2008. IEEE International
  • Conference_Location
    Phoenix, AZ
  • Print_ISBN
    978-1-4244-2049-0
  • Electronic_ISBN
    978-1-4244-2050-6
  • Type

    conf

  • DOI
    10.1109/RELPHY.2008.4558921
  • Filename
    4558921
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2050716