• DocumentCode
    2051107
  • Title

    Passivation integrity investigations for through wafer interconnects

  • Author

    Kraft, J. ; Hueber, A. ; Carniello, S. ; Schrank, F. ; Wachmann, E.

  • Author_Institution
    Austriamicrosystems AG, Graz
  • fYear
    2008
  • fDate
    April 27 2008-May 1 2008
  • Firstpage
    506
  • Lastpage
    509
  • Abstract
    Through wafer interconnects (TWI) with diameters greater than 50 mum have the advantage of extremely low contact resistances. The mechanics of the layers inside the TWI has to be well understood order to avoid passivation cracks. Results of simulation and mechanical investigations are discussed in this paper.
  • Keywords
    contact resistance; integrated circuit interconnections; passivation; wafer level packaging; contact resistances; passivation cracks; through wafer interconnects; Dielectric substrates; Etching; Integrated circuit interconnections; Integrated circuit packaging; Passivation; Plasma temperature; Sensor arrays; Silicon; Stress measurement; Wafer bonding;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium, 2008. IRPS 2008. IEEE International
  • Conference_Location
    Phoenix, AZ
  • Print_ISBN
    978-1-4244-2049-0
  • Electronic_ISBN
    978-1-4244-2050-6
  • Type

    conf

  • DOI
    10.1109/RELPHY.2008.4558937
  • Filename
    4558937
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2051107