A reliability-aware RF power amplifier design for CMOS radio chip integration

Author

Ruberto, Mark ; Degani, Ofir ; Wail, Shay ; Tendler, Alex ; Fridman, Amir ; Goltman, Gennady

Author_Institution

Mobile Wireless Group, Intel Corp., Haifa

fYear

2008

fDate

April 27 2008-May 1 2008

Firstpage

536

Lastpage

540

Abstract

For significant cost reduction in Wi-Fi platforms, the power amplifier must be integrated into the CMOS radio RFIC. This paper surveys how this most challenging circuit was carefully engineered to mitigate aging effects, ESD, and thermal issues for deployment into our product platforms. Experimental results are also presented here.

Keywords

CMOS integrated circuits; cost reduction; electrostatic discharge; integrated circuit reliability; microwave integrated circuits; microwave power amplifiers; wireless LAN; CMOS radio chip integration; ESD; RFIC; Wi-Fi platforms; aging effects; cost reduction; reliability-aware RF power amplifier design; Aging; Costs; Electrostatic discharge; Integrated circuit reliability; Power amplifiers; Power engineering and energy; Radio frequency; Radiofrequency amplifiers; Radiofrequency integrated circuits; Reliability engineering; CMOS; ESD; RFIC; Wi-Fi; hot carrier; power amplifier; reliability; thermal;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium, 2008. IRPS 2008. IEEE International

Conference_Location

Phoenix, AZ

Print_ISBN

978-1-4244-2049-0

Electronic_ISBN

978-1-4244-2050-6

Type

conf

DOI

10.1109/RELPHY.2008.4558942

Filename

4558942