Proposal for a new room temperature X-ray detector-thallium lead-iodide

Author

Kocsis, M.

Author_Institution

Eur. Synchrotron Radiat. Facility, Grenoble, France

Volume

2

fYear

1999

fDate

1999

Firstpage

741

Abstract

Numerous compounds have been considered for room temperature semiconductor detector application, but most of them suffer from difficulties of crystal growth, fabrication and handling. Here we propose TlPbI₃, as a promising candidate, which does not have any structural phase transitions between room temperature and melting point and it is non-layered, with rhombohedral crystal structure. The low vapour pressure makes the crystal growth easier and it has a low melting point (619 K), high Z, high density (6.6 g/cm³), and bandgap of 2.3 eV. X-ray photoconductivity measurements indicate that this material can be used as a room temperature solid state detector

Keywords

X-ray detection; semiconductor counters; thallium compounds; 2.3 eV; TlPbI₃; X-ray photoconductivity measurements; low vapour pressure; rhombohedral crystal structure; room temperature X-ray detector; structural phase transitions; Crystalline materials; Fabrication; Photoconducting materials; Photoconductivity; Photonic band gap; Proposals; Solid state circuits; Temperature; X-ray detection; X-ray detectors;

fLanguage

English

Publisher

ieee

Conference_Titel

Nuclear Science Symposium, 1999. Conference Record. 1999 IEEE

Conference_Location

Seattle, WA

ISSN

1082-3654

Print_ISBN

0-7803-5696-9

Type

conf

DOI

10.1109/NSSMIC.1999.845774

Filename

845774