DocumentCode
2051737
Title
Acomprehensive compact SCR model for CDM ESD circuit simulation
Author
Lou, Lifang ; Liou, Juin J.
Author_Institution
Sch. of Electr. Eng. & Comput. Sci., Univ. of Central Florida, Orlando, FL
fYear
2008
fDate
April 27 2008-May 1 2008
Firstpage
635
Lastpage
636
Abstract
We have presented a comprehensive SCR compact model for CDM simulation. The work illustrated the useful and effective macromodeling approach of integrating the various industry standard models to describe the different devices imbedded in the SCR and treating the CDM-relevant operation states. In additional to the prediction of TLP results, the presented model demonstrates the effectiveness in analyzing CDM response of the I/O circuits and successfully explains why the input pins have lower CDM robustness than the output pins.
Keywords
BiCMOS integrated circuits; circuit simulation; electrostatic discharge; semiconductor device models; thyristors; BiCMOS process; CDM ESD circuit simulation; CDM stresses; I/O circuits; comprehensive compact SCR model; industry standard models; macromodeling approach; Biological system modeling; Circuit simulation; Electrostatic discharge; Light emitting diodes; Pins; Protection; RLC circuits; Stress; Thyristors; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium, 2008. IRPS 2008. IEEE International
Conference_Location
Phoenix, AZ
Print_ISBN
978-1-4244-2049-0
Electronic_ISBN
978-1-4244-2050-6
Type
conf
DOI
10.1109/RELPHY.2008.4558963
Filename
4558963
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