• DocumentCode
    2051737
  • Title

    Acomprehensive compact SCR model for CDM ESD circuit simulation

  • Author

    Lou, Lifang ; Liou, Juin J.

  • Author_Institution
    Sch. of Electr. Eng. & Comput. Sci., Univ. of Central Florida, Orlando, FL
  • fYear
    2008
  • fDate
    April 27 2008-May 1 2008
  • Firstpage
    635
  • Lastpage
    636
  • Abstract
    We have presented a comprehensive SCR compact model for CDM simulation. The work illustrated the useful and effective macromodeling approach of integrating the various industry standard models to describe the different devices imbedded in the SCR and treating the CDM-relevant operation states. In additional to the prediction of TLP results, the presented model demonstrates the effectiveness in analyzing CDM response of the I/O circuits and successfully explains why the input pins have lower CDM robustness than the output pins.
  • Keywords
    BiCMOS integrated circuits; circuit simulation; electrostatic discharge; semiconductor device models; thyristors; BiCMOS process; CDM ESD circuit simulation; CDM stresses; I/O circuits; comprehensive compact SCR model; industry standard models; macromodeling approach; Biological system modeling; Circuit simulation; Electrostatic discharge; Light emitting diodes; Pins; Protection; RLC circuits; Stress; Thyristors; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium, 2008. IRPS 2008. IEEE International
  • Conference_Location
    Phoenix, AZ
  • Print_ISBN
    978-1-4244-2049-0
  • Electronic_ISBN
    978-1-4244-2050-6
  • Type

    conf

  • DOI
    10.1109/RELPHY.2008.4558963
  • Filename
    4558963