Roles of high-k and interfacial layers on TDDB reliability studied with HfAlOX/SiO2 stacked gate dielectrics

Author

Okada, Kenji ; Ota, Hiroyuki ; Hirano, Akito ; Ogawa, Arito ; Nabatame, Toshihide ; Toriumi, Akira

Author_Institution

MIRAI-ASET, Tsukuba

fYear

2008

fDate

April 27 2008-May 1 2008

Firstpage

661

Lastpage

662

Abstract

The objective of this paper is to clarify the primary roles of high-k layer and of interfacial layer on the TDDB lifetime in order to provide a guideline for realizing adequate TDDB reliability and also for the further high-k material selection. HfAlO(N)/SiO(N) and HfON/SiON stacked gate dielectrics has been fabricated with various deposition conditions and thicknesses. Electrical characteristics were evaluated with n+ and p+ poly-Si gated n- and p-channel MOSFETs. It was found that TDDB reliability depends of the thickness of high-k layer, regardless of the nitrogen concentration.

Keywords

MOSFET; annealing; electric breakdown; hafnium compounds; high-k dielectric thin films; interface structure; silicon compounds; HfAlO_X-SiO₂; HfON-SiON; MOSFETs; annealing; dielectric breakdown; high-k dielectrics; interfacial layers; layer-by-layer deposition; stacked gate dielectrics; Breakdown voltage; Charge carrier processes; Crystallization; Dielectric breakdown; Electric breakdown; High K dielectric materials; High-K gate dielectrics; Production; Semiconductor device modeling; Stress;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium, 2008. IRPS 2008. IEEE International

Conference_Location

Phoenix, AZ

Print_ISBN

978-1-4244-2049-0

Electronic_ISBN

978-1-4244-2050-6

Type

conf

DOI

10.1109/RELPHY.2008.4558976

Filename

4558976