DocumentCode
2052524
Title
Modeling of threshold voltage in three-dimensional SOI-structures
Author
Kogut, I.T. ; Scherbyak, V.M.
fYear
2010
fDate
23-27 Feb. 2010
Firstpage
360
Lastpage
360
Abstract
This paper proposed an original approach to the analysis of the threshold voltage metal-oxide-semiconductor structures based on local three-dimensional SOI-structures.
Keywords
MOSFET; silicon-on-insulator; MOS-transistor; cylinder shaped gate; metal-oxide-semiconductor structures; three-dimensional SOI-structures; threshold voltage modeling; ¿-shaped profile gate; CMOS integrated circuits; Crystallization; Electric potential; Integrated circuit manufacture; Manufacturing industries; Manufacturing processes; Mathematical analysis; Mathematical model; Silicon; Threshold voltage; II-shaped profile gate; SOI MOS-transistor; cylinder shaped gate; three-dimensional SOI-structure; threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Modern Problems of Radio Engineering, Telecommunications and Computer Science (TCSET), 2010 International Conference on
Conference_Location
Lviv-Slavske
Print_ISBN
978-966-553-875-2
Electronic_ISBN
978-966-553-901-8
Type
conf
Filename
5445980
Link To Document