DocumentCode
2052562
Title
Effect of crystal-originated particles (COPs) on ULSI process integrity
Author
Po-Ying Chen ; Chen, Po-Ying ; Tsai, M.H. ; Jing, M.H. ; Lin, T.-C. ; Yeh, Wen Kuan
Author_Institution
Dept. of Inf. Eng., I-Shou Univ., Kaohsiung
fYear
2008
fDate
April 27 2008-May 1 2008
Firstpage
711
Lastpage
712
Abstract
The effects of crystal-originated particles (COPs) on ultra-thin gate oxide for recent ultra large-scale integration (ULSI) devices were studied. Various Czochralski (CZ) silicon wafers were prepared by controlling the pulling speed of silicon ingots to determine the relationships between COPs and the breakdown characteristics of the ultra thin-gate oxide.
Keywords
ULSI; crystal growth from melt; semiconductor technology; Czochralski silicon wafer; ULSI process integrity; crystal-originated particle; ultra large-scale integration device; ultra-thin gate oxide; Atomic force microscopy; Atomic measurements; Dielectric breakdown; Force measurement; Large scale integration; MOS capacitors; Oxidation; Scanning electron microscopy; Silicon; Ultra large scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium, 2008. IRPS 2008. IEEE International
Conference_Location
Phoenix, AZ
Print_ISBN
978-1-4244-2049-0
Electronic_ISBN
978-1-4244-2050-6
Type
conf
DOI
10.1109/RELPHY.2008.4559001
Filename
4559001
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