DocumentCode
2052682
Title
Degradation of light-emitting diodes on the basis of semiconductors of A3B5 by influence γ-irradiation
Author
Irkha, Vasiliy ; Petrenko, Nickolay ; Markolenko, Pavel
Author_Institution
Odessa Nat. Acad. of Telecommun., Odessa, Ukraine
fYear
2010
fDate
23-27 Feb. 2010
Firstpage
366
Lastpage
366
Abstract
Influence of γ-irradiation on characteristics of the light-emitting diodes is considered.
Keywords
gamma-ray effects; light emitting diodes; semiconductor device breakdown; semiconductors; γ-irradiation; A3B5 semiconductors; breakdown voltage; degradation; light-emitting diodes; resistivity; semiconductor materials; Atomic measurements; Charge carriers; Crystallization; Degradation; Electroluminescence; Light emitting diodes; Radiative recombination; Semiconductor diodes; Semiconductor materials; Voltage; degradation; light-emitting diodes; radiation;
fLanguage
English
Publisher
ieee
Conference_Titel
Modern Problems of Radio Engineering, Telecommunications and Computer Science (TCSET), 2010 International Conference on
Conference_Location
Lviv-Slavske
Print_ISBN
978-966-553-875-2
Electronic_ISBN
978-966-553-901-8
Type
conf
Filename
5445986
Link To Document