DocumentCode
2054928
Title
Spin dependent tunneling junctions with ferromagnetic triple-barrier resonant-tunneling spin filter
fYear
2003
fDate
March 30 2003-April 3 2003
Abstract
In this paper, spin dependent tunneling junctions with SPM sensing layer have been made using standard microelectronic fabrication techniques. The SPM-SDT junction have zero hysteresis without biasing and a reasonable sensitivity. A typical SDT junction has a vertical structure of Si(100)-Si/sub 3/N/sub 4/-Ru-NiFeCo-Al/sub 2/O/sub 3/-FeCo-CrMnPt.
Keywords
alumina; chromium alloys; cobalt alloys; ferromagnetic materials; iron alloys; magnetic sensors; magnetic tunnelling; manganese alloys; nickel alloys; paramagnetic materials; platinum alloys; resonator filters; ruthenium; sensitivity; silicon; silicon compounds; sputter deposition; superparamagnetism; thin films; Si-Si/sub 3/N/sub 4/-Ru-NiFeCo-Al/sub 2/O/sub 3/-FeCo-CrMnPt; ferromagnetic triple-barrier resonant-tunneling spin filter; microelectronic fabrication; sensitivity; spin dependent tunneling junctions; superparamagnetic sensing layer; Biomedical measurements; Filters; Magnetic field measurement; Magnetic materials; Magnetic recording; Magnetic separation; Random media; Resonant tunneling devices; Scanning probe microscopy; Solid state circuits;
fLanguage
English
Publisher
ieee
Conference_Titel
Magnetics Conference, 2003. INTERMAG 2003. IEEE International
Conference_Location
Boston, MA, USA
Print_ISBN
0-7803-7647-1
Type
conf
DOI
10.1109/INTMAG.2003.1230806
Filename
1230806
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