• DocumentCode
    2056055
  • Title

    Surge current capability of IGBTs

  • Author

    Basler, Thomas ; Lutz, Josef ; Jakob, Roland ; Brückner, Thomas

  • Author_Institution
    Dept. of Power Electron. & EMC, Chemnitz Univ. of Technol., Chemnitz, Germany
  • fYear
    2012
  • fDate
    20-23 March 2012
  • Firstpage
    1
  • Lastpage
    6
  • Abstract
    Commonly an IGBT cannot withstand a surge-current pulse (large overcurrent with a duration of some milliseconds) due to the current saturation characteristic of this device. In the case of a converter´s single device failure the IGBT switches are driven into pulse-blocking mode to prevent a DC-link short-circuit and subsequent IGBT failures. This strategy leads to an asymmetric short circuit of the load. The paper introduces the possibility to symmetrize the load short circuit with active turned on IGBTs and shows first measurements on high-voltage press-pack IGBT chips under heavy overcurrent condition with increased gate voltage.
  • Keywords
    high-voltage engineering; overcurrent protection; power convertors; power semiconductor switches; short-circuit currents; surge protection; DC-link short-circuit prevention; IGBT failure; IGBT switches; asymmetric load short circuit; converter single device failure; current saturation characteristic; gate voltage; heavy overcurrent condition; high-voltage press-pack IGBT chips measurement; pulse-blocking mode; surge-current pulse capability; Current measurement; Insulated gate bipolar transistors; Logic gates; Semiconductor device measurement; Temperature; Temperature measurement; Voltage measurement; IGBT; Surge-Current Robustness; Voltage Controlled Device;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Systems, Signals and Devices (SSD), 2012 9th International Multi-Conference on
  • Conference_Location
    Chemnitz
  • Print_ISBN
    978-1-4673-1590-6
  • Electronic_ISBN
    978-1-4673-1589-0
  • Type

    conf

  • DOI
    10.1109/SSD.2012.6198072
  • Filename
    6198072