DocumentCode
2057497
Title
Counting single electrons in a CMOS circuit
Author
Popovic, Radivoje S. ; Lany, Marc
Author_Institution
Ecole Polytech. Fed. de Lausanne, Inst. of Microengineering, Lausanne
fYear
2008
fDate
11-14 May 2008
Firstpage
55
Lastpage
60
Abstract
We describe a device compatible with CMOS technology, which permits to detect a single charge by multiplying it to an easily measurable level. The device is a bipolar transistor optimized for the operation in the Geiger avalanche mode. A single electron, injected through the base- emitter junction, triggers avalanche breakdown in the collector- base junction. The breakdown is then rapidly stopped by a quenching circuit. This cycle produces a voltage pulse at the collector, which corresponds to the injection of a single electron. By counting the pulses, currents down to the atto-Ampere range are measured. The device can be used as a bitstream-generator in a delta-sigma analog-to-digital converter.
Keywords
CMOS integrated circuits; analogue-digital conversion; avalanche breakdown; bipolar transistors; CMOS circuit; Geiger avalanche mode; atto-Ampere range; avalanche breakdown; base- emitter junction; bipolar transistor; bitstream-generator; collector- base junction; delta-sigma analog-to-digital converter; quenching circuit; single electron; voltage pulse; Avalanche breakdown; Bipolar transistors; CMOS technology; Charge measurement; Circuits; Current measurement; Electric breakdown; Electron emission; Pulse measurements; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Microelectronics, 2008. MIEL 2008. 26th International Conference on
Conference_Location
Nis
Print_ISBN
978-1-4244-1881-7
Electronic_ISBN
978-1-4244-1882-4
Type
conf
DOI
10.1109/ICMEL.2008.4559222
Filename
4559222
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