Generation of high power (> 7W) yellow-orange radiation by frequency doubling of GaInNAs-based semiconductor disk laser

Author

Leinonen, Tomi ; Puustinen, Janne ; Korpijärvi, Ville-Markus ; Härkönen, Antti ; Guina, Mircea ; Epstein, Ryan J.

Author_Institution

Optoelectron. Res. Centre, Tampere Univ. of Technol., Tampere, Finland

fYear

2011

fDate

22-26 May 2011

Firstpage

1

Lastpage

1

Abstract

We report recent developments of GalnNAs-based semiconductor disk lasers (SDLs) emitting at around 590 nm. GalnNAs/GaAs (dilute nitride) quantum-wells enable lasing at a wavelength of -1180 nm with reduced indium content and hence reduced lattice strain as compared to InGaAs quantum wells, leading to SDL operation with output powers of more than 11W using a single gain chip, The importance of dilute nitride material system for generating high power yellow-orange radiation via frequency doubling of -1180 nm SDLs has been recently recognized.

Keywords

III-V semiconductors; gallium arsenide; indium compounds; optical harmonic generation; quantum well lasers; wide band gap semiconductors; GaInNAs-GaAs; dilute nitride material system; frequency doubling; high power yellow-orange radiation generation; laser output powers; lasing wavelength; lattice strain; quantum-wells lasers; semiconductor disk laser; single gain chip; Mirrors;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Europe (CLEO EUROPE/EQEC), 2011 Conference on and 12th European Quantum Electronics Conference

Conference_Location

Munich

ISSN

Pending

Print_ISBN

978-1-4577-0533-5

Electronic_ISBN

Pending

Type

conf

DOI

10.1109/CLEOE.2011.5942572

Filename

5942572