• DocumentCode
    2057611
  • Title

    PbSe quantum well VECSEL on Si

  • Author

    Fill, M. ; Rahim, M. ; Khiar, A. ; Felder, F. ; Zogg, H.

  • Author_Institution
    Thin Film Phys. Group, ETH Zurich, Zürich, Switzerland
  • fYear
    2011
  • fDate
    22-26 May 2011
  • Firstpage
    1
  • Lastpage
    1
  • Abstract
    Lead-chalcogenide Vertical External Cavity Surface Emitting Lasers (VECSEL) employing PbSe, PbTe and PbSnTe as active layers have recently been described. Here we present PbSe quantum well (QW) VECSEL covering a wavelength-range from 3.3 to 5.0 μm.
  • Keywords
    IV-VI semiconductors; elemental semiconductors; lead compounds; quantum well lasers; silicon; surface emitting lasers; PbSe; PbSnTe; PbTe; active layers; lead-chalcogenide vertical external cavity surface emitting lasers; quantum well VECSEL; wavelength 3.3 mum to 5 mum; Lead;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics Europe (CLEO EUROPE/EQEC), 2011 Conference on and 12th European Quantum Electronics Conference
  • Conference_Location
    Munich
  • ISSN
    Pending
  • Print_ISBN
    978-1-4577-0533-5
  • Electronic_ISBN
    Pending
  • Type

    conf

  • DOI
    10.1109/CLEOE.2011.5942574
  • Filename
    5942574
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2057611