80-GHz AlGaInAs/InP 1.55 µm colliding-pulse mode-locked laser with low divergence angle and timing jitter

Author

Hou, Lianping ; Haji, Mohsin ; Li, Chong ; Akbar, Jehan ; Marsh, John H. ; Bryce, A. Catrina

Author_Institution

Sch. of Eng., Univ. of Glasgow, Glasgow, UK

fYear

2011

fDate

22-26 May 2011

Firstpage

1

Lastpage

1

Abstract

In this paper we report a new epitaxial laser wafer design and the performance of an 80-GHz AlGalnAs/InP λ~l .55 μm CPM laser with a low divergence angle and timing jitter. Based on a standard epi-wafer, an additional thin layer (160-nm-thick 1.1Q), hereafter referred to as the far-field reduction layer (FRL), was inserted in the lower n-cladding layer with a 750-nm-thick InP spacer between the active layer and FRL. This design increases the spot size and reduces the internal loss of the cavity, while suppressing higher transverse mode lasing.

Keywords

III-V semiconductors; aluminium compounds; claddings; gallium arsenide; indium compounds; laser cavity resonators; laser mode locking; optical losses; quantum well lasers; semiconductor epitaxial layers; timing jitter; AlGaInAs-InP; cavity internal loss; cladding layer; colliding-pulse mode-locked laser; divergence angle; epitaxial laser wafer design; far-field reduction layer; frequency 80 GHz; size 160 nm; size 750 nm; spacer layer; spot size; standard epiwafer; timing jitter; transverse mode lasing; wavelength 1.55 mum; Couplings; Laser mode locking; Optical pulses; Optical waveguides; Surface emitting lasers; Timing jitter; Waveguide lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Europe (CLEO EUROPE/EQEC), 2011 Conference on and 12th European Quantum Electronics Conference

Conference_Location

Munich

ISSN

Pending

Print_ISBN

978-1-4577-0533-5

Electronic_ISBN

Pending

Type

conf

DOI

10.1109/CLEOE.2011.5942606

Filename

5942606