Challenges and solutions for numerical modeling of nanoMOSFETs

In this paper we discuss the main challenges in the simulation of nanoMOSFETs and present an efficient code for the quantum simulation of ballistic field effect transistors. The code is based on the self-consistent solution in two-dimensions of the Poisson equation, of the Schrodinger equation, and of the continuity equation for ballistic electrons. In addition, our code takes properly into account the effect of strain on the band structure of silicon and on ballistic transport in the channel. The code is a remarkable result, since it demonstrates that quantum simulation of nanoMOSFETs, with realistic structure and doping profile, can be performed with a simple high-end PC, and does not require the huge processor clusters, at it is sometimes been proposed. A discussion on current and future developments of the modeling tools is also presented.