DocumentCode
2058944
Title
Laser ablation synthesis of oxide nanowires and their properties
Author
Liu, Zuqin ; Zhang, Daihua ; Li, Chao ; Zhou, Chongwu
Author_Institution
Dept. of Electr. Eng. & Electrophys., Univ. of Southern California, Los Angeles, CA, USA
Volume
2
fYear
2003
fDate
12-14 Aug. 2003
Firstpage
592
Abstract
We report an efficient and reliable laser-ablation approach for large-scale synthesis of SnO2 and ZnO nanowires. The nanowire growth followed the vapor-liquid-solid model. Precise control over the nanowire diameters has been achieved by using monodispersed gold clusters as the catalyst. Detailed material analysis such as transmission electron microscopy (TEM) and X-ray diffraction (XRD) were used to confirm the crystal structure of the nanowires. In addition, field effect transistors have been constructed based on individual SnO2 nanowires, and excellent n-type transistor characteristics were observed. These nanowire transistors were further demonstrated to work as sensitive UV detectors.
Keywords
II-VI semiconductors; X-ray diffraction; catalysts; crystal structure; field effect transistors; gold; metal clusters; nanowires; pulsed laser deposition; tin compounds; transmission electron microscopy; ultraviolet detectors; wide band gap semiconductors; zinc compounds; Si-SiO2; SnO2; SnO2 nanowires; TEM; X-ray diffraction; XRD; ZnO; ZnO nanowires; catalyst monodispersed gold clusters; crystal structure; electronic properties; field effect transistors; laser ablation synthesis; n-type transistor property; nanowire transistors; oxide nanowires; sensitive UV detectors; transmission electron microscopy; vapor liquid solid model; Crystalline materials; FETs; Gold; Large-scale systems; Laser ablation; Laser modes; Nanowires; Optical materials; X-ray lasers; Zinc oxide;
fLanguage
English
Publisher
ieee
Conference_Titel
Nanotechnology, 2003. IEEE-NANO 2003. 2003 Third IEEE Conference on
Print_ISBN
0-7803-7976-4
Type
conf
DOI
10.1109/NANO.2003.1230980
Filename
1230980
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