• DocumentCode
    2058959
  • Title

    Influence of fluorine contamination on semiconductor wafer probing

  • Author

    Reinl, M. ; Lindner, T. Stimpel ; Sulima, T. ; Eisele, I. ; Nagler, O. ; Kaesen, F.

  • Author_Institution
    Inst. of Phys., Univ. der Bunderwehr Munich, Munich
  • fYear
    2008
  • fDate
    11-14 May 2008
  • Firstpage
    283
  • Lastpage
    286
  • Abstract
    Probing over active area (POAA) is gaining more influence in modern semiconductor production. Because of the existing bonding technology aluminum is still used as last metal layer. Whereas it is assumed that the problems during probing are mainly caused by the native aluminum oxide on the pad surface we will show, that other contaminations must be considered as well, especially fluorine. A possible cleaning step to improve the probing performance will be shown and discussed.
  • Keywords
    monolithic integrated circuits; Probing over active area; aluminum oxide; fluorine contamination; semiconductor production; semiconductor wafer probing; Aluminum oxide; Contacts; Contamination; Electric variables measurement; Force measurement; Force sensors; Gold; Plasma measurements; Pollution measurement; Production;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microelectronics, 2008. MIEL 2008. 26th International Conference on
  • Conference_Location
    Nis
  • Print_ISBN
    978-1-4244-1881-7
  • Electronic_ISBN
    978-1-4244-1882-4
  • Type

    conf

  • DOI
    10.1109/ICMEL.2008.4559279
  • Filename
    4559279