DocumentCode
2058959
Title
Influence of fluorine contamination on semiconductor wafer probing
Author
Reinl, M. ; Lindner, T. Stimpel ; Sulima, T. ; Eisele, I. ; Nagler, O. ; Kaesen, F.
Author_Institution
Inst. of Phys., Univ. der Bunderwehr Munich, Munich
fYear
2008
fDate
11-14 May 2008
Firstpage
283
Lastpage
286
Abstract
Probing over active area (POAA) is gaining more influence in modern semiconductor production. Because of the existing bonding technology aluminum is still used as last metal layer. Whereas it is assumed that the problems during probing are mainly caused by the native aluminum oxide on the pad surface we will show, that other contaminations must be considered as well, especially fluorine. A possible cleaning step to improve the probing performance will be shown and discussed.
Keywords
monolithic integrated circuits; Probing over active area; aluminum oxide; fluorine contamination; semiconductor production; semiconductor wafer probing; Aluminum oxide; Contacts; Contamination; Electric variables measurement; Force measurement; Force sensors; Gold; Plasma measurements; Pollution measurement; Production;
fLanguage
English
Publisher
ieee
Conference_Titel
Microelectronics, 2008. MIEL 2008. 26th International Conference on
Conference_Location
Nis
Print_ISBN
978-1-4244-1881-7
Electronic_ISBN
978-1-4244-1882-4
Type
conf
DOI
10.1109/ICMEL.2008.4559279
Filename
4559279
Link To Document