• DocumentCode
    2060172
  • Title

    Fabrication of fully released aluminum nitride nanoresonators

  • Author

    Currano, L.J. ; Wickenden, A.E. ; Dubey, M.

  • Author_Institution
    Sensors & Electron. Devices Directorate, US Army Res. Lab., Adelphi, MD, USA
  • Volume
    2
  • fYear
    2003
  • fDate
    12-14 Aug. 2003
  • Firstpage
    778
  • Abstract
    Piezoelectric aluminum nitride (AlN) clamped-clamped beam nanoresonators having widths as small as 250 nm have been fabricated. The devices consist of a SiO2 structural layer, a platinum bottom electrode, an AlN piezoelectrically active layer, and top platinum driving and sensing electrodes. An additional SiO2 layer is used for electrical isolation from the silicon substrate and between the top and bottom electrode traces.
  • Keywords
    III-V semiconductors; aluminium compounds; crystal resonators; micromechanical resonators; nanotechnology; piezoelectric materials; silicon compounds; wide band gap semiconductors; 250 nm; AlN; Si; SiO2; SiO2 structural layer; aluminum nitride nanoresonators; electrical isolation; piezoelectric aluminum nitride clamped-clamped beam nanoresonators; platinum bottom electrode; sensing electrodes; silicon substrate; Aluminum nitride; Capacitive sensors; Electrodes; Filtering; Lithography; Optical device fabrication; Optical resonators; Piezoelectric devices; Platinum; Resonator filters;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nanotechnology, 2003. IEEE-NANO 2003. 2003 Third IEEE Conference on
  • Print_ISBN
    0-7803-7976-4
  • Type

    conf

  • DOI
    10.1109/NANO.2003.1231029
  • Filename
    1231029
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2060172