• DocumentCode
    2060225
  • Title

    Patterning Si3N4 and TiN with scanning probe lithography

  • Author

    Chien, F.S.-S. ; You, Y.-C. ; Yao, B.C. ; Hsieh, J.-L. ; Lai, D.-Y. ; Lai, C.-S. ; Jeng, D.

  • Author_Institution
    Center for Meas. Stand., Ind. Technol. Res. Inst., Hsinchu, Taiwan
  • Volume
    2
  • fYear
    2003
  • fDate
    12-14 Aug. 2003
  • Firstpage
    785
  • Abstract
    Processes to pattern nanostructures on the Si3N4 and TiN films based on scanning probe lithography have been demonstrated. The patterned Si3N4 and TiN films were used as etch masks to produce nanostructure on Si substrates. The oxide growth kinetics of both nitride films was studied. The oxide height vs. oxidation period obeys the logarithmic relationship. TiN is superior to Si3N4 as etching mask due to its high oxide growth rate and better performance for dry etching.
  • Keywords
    masks; nanolithography; oxidation; reaction rate constants; silicon compounds; sputter etching; thin films; titanium compounds; Si; Si substrates; Si3N4; Si3N4 films; TiN; TiN films; dry etching; etch masks; nanostructures; nitride films; oxidation; oxide growth kinetics; oxide growth rate; oxide height; scanning probe lithography; Atomic force microscopy; Dry etching; Lithography; Nanostructures; Oxidation; Probes; Semiconductor films; Substrates; Tin; Wet etching;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nanotechnology, 2003. IEEE-NANO 2003. 2003 Third IEEE Conference on
  • Print_ISBN
    0-7803-7976-4
  • Type

    conf

  • DOI
    10.1109/NANO.2003.1231031
  • Filename
    1231031
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2060225