Nitrogen incorporation in dilute group-III arsenide-nitrides

Author

Ramsteiner, Manfred

Author_Institution

Paul-Drude-Inst. fur Festkorperelektronik, Berlin, Germany

fYear

2004

fDate

20-25 Sept. 2004

Firstpage

179

Lastpage

184

Abstract

The incorporation of N in the dilute nitrides (In,Ga)(As,N) has been studied with respect to structural, electronic as well as optical properties. Dominant N-related defects have been detected by deep level transient spectroscopy and Raman scattering. Split-interstitial defects consisting of N aimers are attributed to act as both electron traps and nonradiative recombination centers. The admixture of In into Ga(As,N) strongly influences the bonding of N. The correlated spatial redistribution of In and N in a quantum well structure upon thermal annealing is demonstrated by transmission electron microscopy.

Keywords

III-V semiconductors; Raman spectra; annealing; arsenic compounds; bonds (chemical); deep level transient spectroscopy; electron traps; gallium compounds; indium compounds; interstitials; nitrogen; semiconductor quantum wells; transmission electron microscopy; InGaAsN; N-related defects; Raman scattering; admixture; deep level transient spectroscopy; dilute group-III arsenides-nitrides; electron traps; nitrogen incorporation; nonradiative recombination centers; quantum well; spatial redistribution; split-interstitial defects; thermal annealing; transmission electron microscopy; Annealing; Bonding; Electron optics; Electron traps; Nitrogen; Optical scattering; Radiative recombination; Raman scattering; Spectroscopy; Spontaneous emission;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconducting and Insulating Materials, 2004. SIMC-XIII-2004. 13th International Conference on

Print_ISBN

0-7803-8668-X

Type

conf

DOI

10.1109/SIM.2005.1511413

Filename

1511413