New approach in estimating the lifetime in NBT stressed P-channel power VDMOSFETs

Author

Dankovic, D. ; Manic, I. ; Davidovic, V. ; Djoric-Veljkovic, S. ; Golubovic, S. ; Stojadinovic, N.

Author_Institution

Fac. of Electron. Eng., Nis Univ., Nis

fYear

2008

fDate

11-14 May 2008

Firstpage

599

Lastpage

602

Abstract

A brief overview of NBT stress-induced threshold voltage instabilities in p-channel power vertical double- diffused MOS field-effect transistors (VDMOSFETs) is presented. New approach in estimating the lifetime in NBT stressed p-channel power VDMOSFETs is proposed. The creation of lifetime surface for operating area, which can be useful for determination of device lifetime, operating temperature or operating bias, is demonstrated as well.

Keywords

extrapolation; power MOSFET; semiconductor device models; semiconductor device reliability; NBT stress-induced threshold voltage instability; device lifetime; lifetime extrapolation; lifetime surface; negative bias temperature; operating bias; operating temperature; p-channel power VDMOSFETs; reliability; temperature model; vertical double-diffused MOS field-effect transistors; Extrapolation; Life estimation; Lifetime estimation; MOSFETs; Niobium compounds; Predictive models; Stress; Temperature distribution; Threshold voltage; Titanium compounds;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronics, 2008. MIEL 2008. 26th International Conference on

Conference_Location

Nis

Print_ISBN

978-1-4244-1881-7

Electronic_ISBN

978-1-4244-1882-4

Type

conf

DOI

10.1109/ICMEL.2008.4559357

Filename

4559357