• DocumentCode
    2063713
  • Title

    A novel low-cost horizontal current bipolar transistor (HCBT) with the reduced parasitics

  • Author

    Suligoj, Tomislav ; Biljanovic, Petar ; Sin, Johnny K O ; Wang, Kang L.

  • Author_Institution
    Dept. of Electron., Zagreb Univ., Croatia
  • fYear
    2004
  • fDate
    13-14 Sept. 2004
  • Firstpage
    36
  • Lastpage
    39
  • Abstract
    A novel horizontal current bipolar transistor (HCBT) structure, suitable for the integration with pillar-like MOSFETs, is presented. The HCBT is processed by a low-cost technology in the (111) sidewalls on the [110] wafers, with minimized volume of the extrinsic regions, resulting in reduced parasitics. The HCBT structure exhibits the highest fτ (30.4 GHz) and fTBVCEO product (127.7 GHzV) among the lateral bipolar transistors.
  • Keywords
    millimetre wave bipolar transistors; (111) sidewalls; 30.4 GHz; [110] wafers; extrinsic region volume minimization; horizontal current bipolar transistor; lateral bipolar transistors; low-cost HCBT; parasitics reduction; pillar-like MOSFET integration; Bipolar transistors; CMOS process; CMOS technology; Capacitance; Cutoff frequency; Doping profiles; Etching; Fabrication; Ion implantation; MOSFETs;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting
  • Print_ISBN
    0-7803-8618-3
  • Type

    conf

  • DOI
    10.1109/BIPOL.2004.1365739
  • Filename
    1365739
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2063713