• DocumentCode
    2066983
  • Title

    EP1: Moore´s law challenges below 10nm: Technology, design and economic implications

  • Author

    Sheu, Bing ; Wilcox, Kathy ; Keshavarzi, A M ; Antoniadis, Dimitri

  • Author_Institution
    TSMC, Hsinchu, Taiwan
  • fYear
    2015
  • fDate
    22-26 Feb. 2015
  • Firstpage
    1
  • Lastpage
    1
  • Abstract
    Moore´s Law has governed advances of silicon technology for more than four decades, providing a tremendous reduction in cost per transistor. Device geometry, packing density, speed performance, and manufacturing cost of a single transistor have scaled together-according to Dennard scaling rule. Approaching the sub-10nm era and beyond, Moore´s Law faces serious challenges in the near future (5–6 years). Device geometry/density/performance/cost will not scale simultaneously anymore. What are the new scaling rules for logic and memory? Researchers are racing to address 3 scenarios: 1) extending silicon, 2) beyond silicon, and 3) beyond CMOS.
  • Keywords
    Computer architecture; Economics; Performance evaluation; Silicon; Technological innovation; Three-dimensional displays; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid- State Circuits Conference - (ISSCC), 2015 IEEE International
  • Conference_Location
    San Francisco, CA, USA
  • Print_ISBN
    978-1-4799-6223-5
  • Type

    conf

  • DOI
    10.1109/ISSCC.2015.7063150
  • Filename
    7063150