DocumentCode
2066983
Title
EP1: Moore´s law challenges below 10nm: Technology, design and economic implications
Author
Sheu, Bing ; Wilcox, Kathy ; Keshavarzi, A M ; Antoniadis, Dimitri
Author_Institution
TSMC, Hsinchu, Taiwan
fYear
2015
fDate
22-26 Feb. 2015
Firstpage
1
Lastpage
1
Abstract
Moore´s Law has governed advances of silicon technology for more than four decades, providing a tremendous reduction in cost per transistor. Device geometry, packing density, speed performance, and manufacturing cost of a single transistor have scaled together-according to Dennard scaling rule. Approaching the sub-10nm era and beyond, Moore´s Law faces serious challenges in the near future (5–6 years). Device geometry/density/performance/cost will not scale simultaneously anymore. What are the new scaling rules for logic and memory? Researchers are racing to address 3 scenarios: 1) extending silicon, 2) beyond silicon, and 3) beyond CMOS.
Keywords
Computer architecture; Economics; Performance evaluation; Silicon; Technological innovation; Three-dimensional displays; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid- State Circuits Conference - (ISSCC), 2015 IEEE International
Conference_Location
San Francisco, CA, USA
Print_ISBN
978-1-4799-6223-5
Type
conf
DOI
10.1109/ISSCC.2015.7063150
Filename
7063150
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