• DocumentCode
    2067971
  • Title

    AlGaN/GaN microwave power transistors for S band

  • Author

    Uren, M.J. ; Hughes, B.T. ; Hayes, D.G. ; Hilton, K.P. ; Martin, T. ; Balmer, R.S. ; Birbeck, J.C.H. ; Davies, R.A.

  • Author_Institution
    Malvern Technol. Centre, QinetiQ Ltd, UK
  • fYear
    2001
  • fDate
    2001
  • Firstpage
    27
  • Lastpage
    30
  • Abstract
    Multifinger power transistors have been fabricated using AlGaN/GaN grown on insulating SiC by MOVPE. Using a 1 μm gate length device, f T of 10 GHz and fMAX of 24 GHz were found for a 1 mm wide device. A total power of 10 W pulsed was obtained for a 10 mm wide device at 2.8 GHz
  • Keywords
    III-V semiconductors; aluminium compounds; gallium compounds; microwave field effect transistors; microwave power transistors; power HEMT; vapour phase epitaxial growth; wide band gap semiconductors; 1 micron; 1 mm; 10 GHz; 10 W; 10 mm; 2 to 4 GHz; 24 GHz; AlGaN-GaN; AlGaN/GaN microwave power transistors; MOVPE; S-band operation; SiC; device fabrication; insulating SiC substrate; multi-finger power HEMTs; multifinger power transistors; Aluminum gallium nitride; Epitaxial layers; Gallium nitride; HEMTs; MODFETs; Power transistors; Pulse measurements; Silicon carbide; Thermal conductivity; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices for Microwave and Optoelectronic Applications, 2001 International Symposium on
  • Conference_Location
    Vienna
  • Print_ISBN
    0-7803-7049-X
  • Type

    conf

  • DOI
    10.1109/EDMO.2001.974278
  • Filename
    974278
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2067971