Simulation of the current fluctuations in reverse biased silicon devices

Author

Apanasovich, V. ; Kautaniuk, A. ; Kuchinski, P. ; Lutkouskaya, K. ; Lutkovski, V.

Author_Institution

Byelorussian State Univ., Minsk, Belarus

fYear

2001

fDate

2001

Firstpage

89

Lastpage

93

Abstract

Current fluctuation processes in silicon avalanche photodiodes, noise generating and voltage-reference diodes are considered in this work. Plausible reasons of microplasma current fluctuations in the reverse-biased n-p junctions are analysed. Both simulation experiments and real experimental data showed that the current fluctuations in all tested diodes strongly depend on the device internal structure

Keywords

avalanche photodiodes; current fluctuations; elemental semiconductors; p-n junctions; semiconductor device models; semiconductor diodes; silicon; Si; Si APD; avalanche photodiodes; current fluctuations simulation; device internal structure; microplasma current fluctuations; noise generating diodes; reverse biased Si devices; reverse-biased n-p junctions; voltage-reference diodes; Avalanche photodiodes; Dark current; Diodes; Fluctuations; Noise generators; Optical noise; Semiconductor device noise; Silicon devices; Testing; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices for Microwave and Optoelectronic Applications, 2001 International Symposium on

Conference_Location

Vienna

Print_ISBN

0-7803-7049-X

Type

conf

DOI

10.1109/EDMO.2001.974289

Filename

974289